STPSC8065

ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °C

650 V power Schottky silicon carbide diode

Manufacturer
STMicroelectronics
Datasheet
9 pages · 497 KB

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STPSC8065 Key Specifications

Source: manufacturer datasheet
工作温度-40 ~ 175 °C

Technical Documents

1 document

Datasheet

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