MASTERGAN4L

ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 125 °C

600 V half-bridge enhancement mode GaN HEMT with high voltage driver

Manufacturer
STMicroelectronics
Datasheet
26 pages · 1.2 MB

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MASTERGAN4L Key Specifications

Source: manufacturer datasheet
工作温度-40 ~ 125 °C

Technical Documents

1 document

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