MASTERGAN1
ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 125 °C
High power density 600V Half bridge driver with two enhancement mode GaN HEMT
- Manufacturer
- STMicroelectronics
- Datasheet
- 27 pages · 525 KB
- Website
- www.st.com
MASTERGAN1 Key Specifications
Source: manufacturer datasheet| 工作温度 | -40 ~ 125 °C |
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Technical Documents
1 documentDatasheet
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