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A2U12M12W2-F1C

ActiveSiC / GaN Wide-BandgapVDS 1200 VID 100 A封装 ACEPACK2

ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET

Manufacturer: STMicroelectronics
Package: ACEPACK2
Datasheet: 14 pages · 474 KB
Website: www.st.com

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A2U12M12W2-F1C Key Specifications

Source: manufacturer datasheet

VDS	1200 V
ID	100 A
封装	ACEPACK2

Technical Documents

1 document

Datasheet

Datasheet - A2U12M12W2-F1C - ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET
14 pages474 KB BookmarkedST-A2U12M12W2F1C.pdf

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Same Series

A2U12M12W2-F2ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC

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Order codes / Aliases

A2U12M12W2F1