MASTERGAN2

ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 125 °C

High power density 600V Half bridge driver with two enhancement mode GaN HEMT

Manufacturer
STMicroelectronics
Datasheet
29 pages · 676 KB

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MASTERGAN2 Key Specifications

Source: manufacturer datasheet
工作温度-40 ~ 125 °C

Technical Documents

1 document

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