STDRIVEG211

ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 125 °C

220 V high-speed half-bridge gate driver for GaN power switches

Manufacturer
STMicroelectronics
Datasheet
33 pages · 1.6 MB

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STDRIVEG211 Key Specifications

Source: manufacturer datasheet
工作温度-40 ~ 125 °C

Technical Documents

1 document

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