SiC / GaN Wide-Bandgap

651 parts

651 parts· 551 ms

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  • A1F25M12W2-F1

    ACEPACK 1 power module, fourpack topology, 1200 V, 25 mΩ typ. SiC MOSFET gen.2 with NTC

    Manufacturers STMicroelectronicsPackage ACEPACK1RDS(on) 25 mΩ封装 ACEPACK1
    1 document
  • A2F12M12W2-F1

    ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC

    Manufacturers STMicroelectronicsPackage ACEPACK2RDS(on) 13 mΩ封装 ACEPACK2
    1 document
  • A2F20M65W3-FC

    ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance

    Manufacturers STMicroelectronicsPackage ACEPACK2RDS(on) 23 mΩ封装 ACEPACK2
    1 document
  • A2TBH45M65W3-FC

    ACEPACK 2 power module, triple boost (650 V, 49 mΩ typ.) plus half-bridge topology (650 V, 23.5 mΩ typ.) SiC Power MOSFET gen. 3 with NTC and capacitance

    Manufacturers STMicroelectronicsPackage ACEPACK2RDS(on) 49 mΩ封装 ACEPACK2
    1 document
  • A2U12M12W2-F1C

    ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET

    Manufacturers STMicroelectronicsPackage ACEPACK2VDS 1200 VID 100 A
    1 document
  • A2U12M12W2-F2

    ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC

    Manufacturers STMicroelectronicsPackage ACEPACK2RDS(on) 13 mΩ封装 ACEPACK2
    1 document
  • A2U8M12W3-FC

    ACEPACK 2 power module, 3-level topology, based on silicon carbide Power MOSFETs 750 and 1200 V

    Manufacturers STMicroelectronicsPackage ACEPACK2封装 ACEPACK2
    1 document
  • GANSPIN611

    High-voltage half-bridge GaN motor driver

    Manufacturers STMicroelectronics
    1 document
  • GANSPIN612

    High-voltage half-bridge GaN motor driver

    Manufacturers STMicroelectronics
    1 document
  • M2P45M12W2-1LA

    Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC

    Manufacturers STMicroelectronicsPackage ACEPACKRDS(on) 47.5 mΩ封装 ACEPACK
    1 document
  • M2TP80M12W2-2LA

    Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC

    Manufacturers STMicroelectronicsPackage ACEPACKRDS(on) 84 mΩ封装 ACEPACK
    1 document
  • MASTERGAN1Industrial

    High power density 600V Half bridge driver with two enhancement mode GaN HEMT

    Manufacturers STMicroelectronics工作温度 -40 ~ 125 °C
    1 document
  • MASTERGAN1LIndustrial

    600 V half-bridge enhancement mode GaN HEMT with high voltage driver

    Manufacturers STMicroelectronics工作温度 -40 ~ 125 °C
    1 document
  • MASTERGAN2Industrial

    High power density 600V Half bridge driver with two enhancement mode GaN HEMT

    Manufacturers STMicroelectronics工作温度 -40 ~ 125 °C
    1 document
  • MASTERGAN4Industrial

    High power density 600V half-bridge driver with two enhancement mode GaN HEMT

    Manufacturers STMicroelectronics工作温度 -40 ~ 125 °C
    1 document
  • MASTERGAN4LIndustrial

    600 V half-bridge enhancement mode GaN HEMT with high voltage driver

    Manufacturers STMicroelectronics工作温度 -40 ~ 125 °C
    1 document
  • MASTERGAN6Industrial

    650 V GaN half-bridge with gate driver and protections

    Manufacturers STMicroelectronics工作温度 -40 ~ 125 °C
    1 document
  • MASTERGAN7Industrial

    650 V GaN half-bridge with gate driver and protections

    Manufacturers STMicroelectronics工作温度 -40 ~ 125 °C
    1 document
  • SCT011H75G3AGAutomotiveAEC-Q101

    Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an H²PAK-7 package

    Manufacturers STMicroelectronicsVDS 750 VID 110 A
    1 document
  • SCT011HU75G3AGAutomotiveAEC-Q101

    Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package

    Manufacturers STMicroelectronicsVDS 750 VID 110 A
    1 document