MASTERGAN6

ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 125 °C

650 V GaN half-bridge with gate driver and protections

Manufacturer
STMicroelectronics
Datasheet
35 pages · 1.8 MB

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MASTERGAN6 Key Specifications

Source: manufacturer datasheet
工作温度-40 ~ 125 °C

Technical Documents

1 document

Datasheet

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