MASTERGAN6
ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 125 °C
650 V GaN half-bridge with gate driver and protections
- Manufacturer
- STMicroelectronics
- Datasheet
- 35 pages · 1.8 MB
- Website
- www.st.com
MASTERGAN6 Key Specifications
Source: manufacturer datasheet| 工作温度 | -40 ~ 125 °C |
|---|
Technical Documents
1 documentDatasheet
Alternatives
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