STDRIVEG210
ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 125 °C
220 V high-speed half-bridge gate driver for GaN power switches
- Manufacturer
- STMicroelectronics
- Datasheet
- 31 pages · 1.3 MB
- Website
- www.st.com
STDRIVEG210 Key Specifications
Source: manufacturer datasheet| 工作温度 | -40 ~ 125 °C |
|---|
Technical Documents
1 documentDatasheet
Alternatives
0 partsNo alternatives listed for STDRIVEG210 yet.