A2TBH45M65W3-FC

ActiveSiC / GaN Wide-BandgapRDS(on) 49 mΩ封装 ACEPACK2

ACEPACK 2 power module, triple boost (650 V, 49 mΩ typ.) plus half-bridge topology (650 V, 23.5 mΩ typ.) SiC Power MOSFET gen. 3 with NTC and capacitance

Manufacturer
STMicroelectronics
Package
ACEPACK2
Datasheet
21 pages · 964 KB

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A2TBH45M65W3-FC Key Specifications

Source: manufacturer datasheet
RDS(on)49 mΩ
封装ACEPACK2

Technical Documents

1 document

Datasheet

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