STPSC10H12G2Y-TR

ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °CVDS 1200 VID 10 A封装 D2PAK

Automotive 1200 V, 10 A, silicon carbide power Schottky diode

Manufacturer
STMicroelectronics
Package
D2PAK
Datasheet
11 pages · 372 KB

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STPSC10H12G2Y-TR Key Specifications

Source: manufacturer datasheet
工作温度-40 ~ 175 °C
VDS1200 V
ID10 A
封装D2PAK

Technical Documents

1 document

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