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STPSC10H065G2

ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °CVDS 650 VID 10 A

650 V, 10 A high surge silicon carbide power Schottky diode

Manufacturer: STMicroelectronics
Datasheet: 11 pages · 378 KB
Website: www.st.com

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STPSC10H065G2 Key Specifications

Source: manufacturer datasheet

工作温度	-40 ~ 175 °C
VDS	650 V
ID	10 A

Technical Documents

1 document

Datasheet

Datasheet - STPSC10H065G2 - 650 V, 10 A high surge silicon carbide power Schottky diode
11 pages378 KB BookmarkedST-STPSC10H065G2.pdf

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