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STPSC10H065BY-TR

ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °C

Automotive 650 V power Schottky silicon carbide diode

Manufacturer: STMicroelectronics
Datasheet: 11 pages · 343 KB
Website: www.st.com

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STPSC10H065BY-TR Key Specifications

Source: manufacturer datasheet

工作温度	-40 ~ 175 °C

Technical Documents

1 document

Datasheet

Datasheet - STPSC10H065BY-TR - Automotive 650 V power Schottky silicon carbide diode
11 pages343 KB BookmarkedST-STPSC10H065BYTR.pdf

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Same Series

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STPSC10H065-YAutomotive 650 V power Schottky silicon carbide diode

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Order codes / Aliases

STPSC10H065STPSC10H065BSTPSC10H065BY