STPSC10H12-Y
ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °C
Automotive grade 1200 V power Schottky silicon carbide diode
- Manufacturer
- STMicroelectronics
- Datasheet
- 10 pages · 528 KB
- Website
- www.st.com
STPSC10H12-Y Key Specifications
Source: manufacturer datasheet| 工作温度 | -40 ~ 175 °C |
|---|
Technical Documents
1 documentDatasheet
Alternatives
0 partsNo alternatives listed for STPSC10H12-Y yet.