STPSC15H12

ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °CVDS 1200 VID 15 A封装 DO-247

1200 V, 15 A power Schottky silicon carbide diode

Manufacturer
STMicroelectronics
Package
DO-247
Datasheet
12 pages · 293 KB

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STPSC15H12 Key Specifications

Source: manufacturer datasheet
工作温度-40 ~ 175 °C
VDS1200 V
ID15 A
封装DO-247

Technical Documents

1 document

Datasheet

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