STPSC12065

ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °CVDS 650 VID 12 A

650 V, 12 A power Schottky silicon carbide diode

Manufacturer
STMicroelectronics
Datasheet
14 pages · 434 KB

Wrong information or a copyright issue? Let us know

STPSC12065 Key Specifications

Source: manufacturer datasheet
工作温度-40 ~ 175 °C
VDS650 V
ID12 A

Technical Documents

1 document

Datasheet

Alternatives

0 parts
No alternatives listed for STPSC12065 yet.