Skip to main content

STPSC10C065-Y

ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °C封装 I2PAK

Automotive 650 V power Schottky silicon carbide diode

Manufacturer: STMicroelectronics
Package: I2PAK
Datasheet: 9 pages · 217 KB
Website: www.st.com

Wrong information or a copyright issue? Let us know

STPSC10C065-Y Key Specifications

Source: manufacturer datasheet

工作温度	-40 ~ 175 °C
封装	I2PAK

Technical Documents

1 document

Datasheet

Datasheet - STPSC10C065-Y - Automotive 650 V power Schottky silicon carbide diode
9 pages217 KB BookmarkedST-STPSC10C065Y.pdf

Alternatives

0 parts

No alternatives listed for STPSC10C065-Y yet.

Where to buy

Prices and stock are set by each distributor

Same Series

None

More from STMicroelectronics

MASTERGAN4High power density 600V half-bridge driver with two enhancement mode GaN HEMT
A2F12M12W2-F1ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC
A2F20M65W3-FCACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance
A2U12M12W2-F1CACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET
A2U12M12W2-F2ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC
GANSPIN611High-voltage half-bridge GaN motor driver
GANSPIN612High-voltage half-bridge GaN motor driver
M2P45M12W2-1LAAutomotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC
M2TP80M12W2-2LAAutomotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC
MASTERGAN1L600 V half-bridge enhancement mode GaN HEMT with high voltage driver
MASTERGAN2High power density 600V Half bridge driver with two enhancement mode GaN HEMT
MASTERGAN4L600 V half-bridge enhancement mode GaN HEMT with high voltage driver

Order codes / Aliases

STPSC10C065