STPSC10065

ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °CVDS 650 VID 10 A

650 V, 10 A low VF power Schottky silicon carbide diode

Manufacturer
STMicroelectronics
Datasheet
13 pages · 390 KB

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STPSC10065 Key Specifications

Source: manufacturer datasheet
工作温度-40 ~ 175 °C
VDS650 V
ID10 A

Technical Documents

1 document

Datasheet

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