STPSC10H12B2-TR
ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °CVDS 1200 VID 10 A封装 DPAK
1200 V, 10 A, silicon carbide power Schottky diode
- Manufacturer
- STMicroelectronics
- Package
- DPAK
- Datasheet
- 11 pages · 218 KB
- Website
- www.st.com
STPSC10H12B2-TR Key Specifications
Source: manufacturer datasheet| 工作温度 | -40 ~ 175 °C |
|---|---|
| VDS | 1200 V |
| ID | 10 A |
| 封装 | DPAK |
Technical Documents
1 documentDatasheet
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