STPSC12G065

ActiveSiC / GaN Wide-Bandgap工作温度 -55 ~ 175 °CVDS 650 VID 12 A

650 V, 12 A high surge silicon carbide power Schottky diode

Manufacturer
STMicroelectronics
Datasheet
10 pages · 548 KB

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STPSC12G065 Key Specifications

Source: manufacturer datasheet
工作温度-55 ~ 175 °C
VDS650 V
ID12 A

Technical Documents

1 document

Datasheet

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