SCT012W90G3-4AG

ActiveSiC / GaN Wide-BandgapVDS 900 VID 110 ARDS(on) 12 mΩ

Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package

Manufacturer
STMicroelectronics
Datasheet
12 pages · 485 KB

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SCT012W90G3-4AG Key Specifications

Source: manufacturer datasheet
VDS900 V
ID110 A
RDS(on)12 mΩ

Technical Documents

1 document

Datasheet

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