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STPSC12G065-Y

ActiveSiC / GaN Wide-Bandgap工作温度 -55 ~ 175 °CVDS 650 VID 12 A

Automotive 650 V, 12 A high surge silicon carbide power Schottky diode

Manufacturer: STMicroelectronics
Datasheet: 10 pages · 554 KB
Website: www.st.com

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STPSC12G065-Y Key Specifications

Source: manufacturer datasheet

工作温度	-55 ~ 175 °C
VDS	650 V
ID	12 A

Technical Documents

1 document

Datasheet

Datasheet - STPSC12G065-Y - Automotive 650 V, 12 A high surge silicon carbide power Schottky diode
10 pages554 KB BookmarkedST-STPSC12G065Y.pdf

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Same Series

STPSC12G065650 V, 12 A high surge silicon carbide power Schottky diode

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Order codes / Aliases

STPSC12G065