SCT20N120AG

量产SiC / GaN 宽禁带器件VDS 1200 VID 20 ARDS(on) 189 mΩ

Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an HiP247 package

SCT20N120AG 主要参数

来源：原厂数据手册

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SCT20N120Silicon carbide Power MOSFET 1200 V, 169 mΩ typ., 20 A in an HiP247 package
SCT20N120HSilicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an H²PAK-2 package
SCT20N170AGAutomotive-grade silicon carbide Power MOSFET 1700 V, 64 mΩ typ., 43 A in an HiP247 package

SCT30N120Silicon carbide Power MOSFET 1200 V, 80 mΩ typ., 45 A in an HiP247 package
SCT50N120Silicon carbide Power MOSFET 1200 V, 52 mΩ typ., 65 A in an HiP247 package
SCTH100N120G2-AGAutomotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
SCTH100N65G2-7AGAutomotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 95 A in an H²PAK-7 package
SCTH35N65G2V-7Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package
SCTH35N65G2V-7AGAutomotive-grade silicon carbide Power MOSFET, 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package
SCTH40N120G2V-7Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an H²PAK-7 package
SCTH40N120G2V7AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an H²PAK-7 package
SCTH60N120G2-7Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an H²PAK-7 package
SCTH60N120G2-7AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package
SCTH70N120G2V-7Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 90 A in an H²PAK‑7 package
SCTH90N65G2V-7Silicon carbide Power MOSFET 650 V, 116 A, 18 mΩ (typ., TJ = 25 °C) in an H²PAK‑7 package

SCT20N120SCT20N120A