SCT20N120

Name: SCT20N120
Brand: STMicroelectronics

量产SiC / GaN 宽禁带器件VDS 1200 VID 20 ARDS(on) 169 mΩ

Silicon carbide Power MOSFET 1200 V, 169 mΩ typ., 20 A in an HiP247 package

SCT20N120 主要参数

来源：原厂数据手册

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暂未收录 SCT20N120 的替代料信息。

价格与库存以渠道为准

SCT20N120AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an HiP247 package
SCT20N120HSilicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an H²PAK-2 package
SCT20N170AGAutomotive-grade silicon carbide Power MOSFET 1700 V, 64 mΩ typ., 43 A in an HiP247 package

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