SCT040W120G3AG

量产SiC / GaN 宽禁带器件VDS 1200 VID 40 ARDS(on) 40 mΩ

Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package

SCT040W120G3AG 主要参数

来源：原厂数据手册

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价格与库存以渠道为准

SCT040W120G3-4Silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247-4 package
SCT040W120G3-4AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247-4 package

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MASTERGAN1High power density 600V Half bridge driver with two enhancement mode GaN HEMT
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MASTERGAN6650 V GaN half-bridge with gate driver and protections
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SCT040W120G3SCT040W120G3A