GANSPIN612

Name: GANSPIN612
Brand: STMicroelectronics

量产SiC / GaN 宽禁带器件

High-voltage half-bridge GaN motor driver

技术文档

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暂未收录 GANSPIN612 的替代料信息。

价格与库存以渠道为准

A1F25M12W2-F1ACEPACK 1 power module, fourpack topology, 1200 V, 25 mΩ typ. SiC MOSFET gen.2 with NTC
A2F12M12W2-F1ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC
A2F20M65W3-FCACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance
A2TBH45M65W3-FCACEPACK 2 power module, triple boost (650 V, 49 mΩ typ.) plus half-bridge topology (650 V, 23.5 mΩ typ.) SiC Power MOSFET gen. 3 with NTC and capacitance
A2U12M12W2-F1CACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET
A2U12M12W2-F2ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC
A2U8M12W3-FCACEPACK 2 power module, 3-level topology, based on silicon carbide Power MOSFETs 750 and 1200 V
M2P45M12W2-1LAAutomotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC
M2TP80M12W2-2LAAutomotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC
MASTERGAN1High power density 600V Half bridge driver with two enhancement mode GaN HEMT
MASTERGAN1L600 V half-bridge enhancement mode GaN HEMT with high voltage driver

GANSPIN612TR