SiC / GaN 宽禁带器件

ACEPACK 1 power module, fourpack topology, 1200 V, 25 mΩ typ. SiC MOSFET gen.2 with NTC

ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC

ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance

ACEPACK 2 power module, triple boost (650 V, 49 mΩ typ.) plus half-bridge topology (650 V, 23.5 mΩ typ.) SiC Power MOSFET gen. 3 with NTC and capacitance

ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET

ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC

ACEPACK 2 power module, 3-level topology, based on silicon carbide Power MOSFETs 750 and 1200 V

High-voltage half-bridge GaN motor driver

High-voltage half-bridge GaN motor driver

Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC

Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC

High power density 600V Half bridge driver with two enhancement mode GaN HEMT

600 V half-bridge enhancement mode GaN HEMT with high voltage driver

High power density 600V Half bridge driver with two enhancement mode GaN HEMT

High power density 600V half-bridge driver with two enhancement mode GaN HEMT

600 V half-bridge enhancement mode GaN HEMT with high voltage driver

650 V GaN half-bridge with gate driver and protections

650 V GaN half-bridge with gate driver and protections

Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an H²PAK-7 package

Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package