SiC / GaN 宽禁带器件
共 651 个型号
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Enhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection 650 V, 27 mΩ, PDSO‐F9
厂商 安森美1 份文档Enhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection 650 V, 27 mΩ, PDSO‐G16
厂商 安森美1 份文档Enhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection 650 V, 19 mΩ, PDSO‐F9
厂商 安森美1 份文档- 1 份文档
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Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L
厂商 安森美封装 TO-2471 份文档Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L
厂商 安森美封装 TO-2471 份文档Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L
厂商 安森美封装 TO-2471 份文档Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L
厂商 安森美封装 TO-2471 份文档Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20 A, 1200 V, D3, TO-247-2L
厂商 安森美封装 TO-2471 份文档Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-3L
厂商 安森美封装 TO-2471 份文档Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L
厂商 安森美封装 TO-2471 份文档