SiC / GaN 宽禁带器件

共 651 个型号

共 142 个型号· 599 ms

排序默认热度型号 A-Z
车规级 清除筛选
  • SCT011H75G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an H²PAK-7 package

    厂商 意法半导体VDS 750 VID 110 A
    1 份文档
  • SCT011HU75G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package

    厂商 意法半导体VDS 750 VID 110 A
    1 份文档
  • SCT012H90G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H²PAK-7 package

    厂商 意法半导体VDS 900 VID 110 A
    1 份文档
  • SCT012W90G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package

    厂商 意法半导体VDS 900 VID 110 A
    1 份文档
  • SCT012W90G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247 package

    厂商 意法半导体VDS 900 VID 110 A
    1 份文档
  • SCT014HU65G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mΩ typ., 110 A in an HU3PAK package

    厂商 意法半导体VDS 650 VID 110 A
    1 份文档
  • SCT015W120G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mΩ typ., 129 A in an HiP247-4 package

    厂商 意法半导体VDS 1200 VID 129 A
    1 份文档
  • SCT016H120G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mΩ typ., 112 A in an H²PAK-7 package

    厂商 意法半导体VDS 1200 VID 112 A
    1 份文档
  • SCT018H65G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package

    厂商 意法半导体VDS 650 VID 55 A
    1 份文档
  • SCT018HU65G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 21.5 mΩ typ., 60 A in an HU3PAK package

    厂商 意法半导体VDS 650 VID 60 A
    1 份文档
  • SCT018W65G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an HiP247-4 package

    厂商 意法半导体VDS 650 VID 55 A
    1 份文档
  • SCT018W65G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an HiP247 package

    厂商 意法半导体VDS 650 VID 55 A
    1 份文档
  • SCT019HU120G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mΩ typ., 90 A in an HU3PAK package

    厂商 意法半导体VDS 1200 VID 90 A
    1 份文档
  • SCT019W120G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mΩ typ., 90 A in an HiP247-4 package

    厂商 意法半导体VDS 1200 VID 90 A
    1 份文档
  • SCT020H120G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package

    厂商 意法半导体VDS 1200 VID 100 A
    1 份文档
  • SCT020H75G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 750 V, 22 mΩ typ., 85 A in an H²PAK-7 package

    厂商 意法半导体VDS 750 VID 85 A
    1 份文档
  • SCT020HU120G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HU3PAK package

    厂商 意法半导体VDS 1200 VID 100 A
    1 份文档
  • SCT020W120G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HiP247-4 package

    厂商 意法半导体VDS 1200 VID 100 A
    1 份文档
  • SCT025H120G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package

    厂商 意法半导体VDS 1200 VID 55 A
    1 份文档
  • SCT025HU120G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 60 A in an HU3PAK package

    厂商 意法半导体VDS 1200 VID 60 A
    1 份文档