SCT019W120G3-4AG

量产SiC / GaN 宽禁带器件VDS 1200 VID 90 ARDS(on) 19.2 mΩ

Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mΩ typ., 90 A in an HiP247-4 package

SCT019W120G3-4AG 主要参数

来源：原厂数据手册

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SCT019W120G34SCT019W120G34A