MASTERGAN1

Name: MASTERGAN1
Brand: STMicroelectronics

量产SiC / GaN 宽禁带器件工作温度 -40 ~ 125 °C

High power density 600V Half bridge driver with two enhancement mode GaN HEMT

MASTERGAN1 主要参数

来源：原厂数据手册

工作温度	-40 ~ 125 °C

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价格与库存以渠道为准

MASTERGAN1L600 V half-bridge enhancement mode GaN HEMT with high voltage driver
MASTERGAN2High power density 600V Half bridge driver with two enhancement mode GaN HEMT
MASTERGAN3High power density 600 V Half bridge driver with two enhancement mode GaNHEMT
MASTERGAN4High power density 600V half-bridge driver with two enhancement mode GaN HEMT
MASTERGAN4L600 V half-bridge enhancement mode GaN HEMT with high voltage driver
MASTERGAN5High power density 600 V half-bridge driver with two enhancement mode GaNHEMT
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MASTERGAN1TR