MASTERGAN1L

Name: MASTERGAN1L
Brand: STMicroelectronics

量产SiC / GaN 宽禁带器件工作温度 -40 ~ 125 °C

600 V half-bridge enhancement mode GaN HEMT with high voltage driver

MASTERGAN1L 主要参数

来源：原厂数据手册

工作温度	-40 ~ 125 °C

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价格与库存以渠道为准

MASTERGAN1High power density 600V Half bridge driver with two enhancement mode GaN HEMT
MASTERGAN2High power density 600V Half bridge driver with two enhancement mode GaN HEMT
MASTERGAN3High power density 600 V Half bridge driver with two enhancement mode GaNHEMT
MASTERGAN4High power density 600V half-bridge driver with two enhancement mode GaN HEMT
MASTERGAN4L600 V half-bridge enhancement mode GaN HEMT with high voltage driver
MASTERGAN5High power density 600 V half-bridge driver with two enhancement mode GaNHEMT
MASTERGAN6650 V GaN half-bridge with gate driver and protections
MASTERGAN7650 V GaN half-bridge with gate driver and protections

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MASTERGAN1MASTERGAN1LTR