SCT025HU120G3AG

量产SiC / GaN 宽禁带器件VDS 1200 VID 60 ARDS(on) 27 mΩ

Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 60 A in an HU3PAK package

SCT025HU120G3AG 主要参数

来源：原厂数据手册

1 份文档

0 个

暂未收录 SCT025HU120G3AG 的替代料信息。

价格与库存以渠道为准

暂无

GANSPIN611High-voltage half-bridge GaN motor driver
MASTERGAN2High power density 600V Half bridge driver with two enhancement mode GaN HEMT
MASTERGAN4High power density 600V half-bridge driver with two enhancement mode GaN HEMT
STDRIVEG210220 V high-speed half-bridge gate driver for GaN power switches
STDRIVEG211220 V high-speed half-bridge gate driver for GaN power switches
STDRIVEG212220 V high-speed half-bridge gate driver for GaN power switches
STDRIVEG610High voltage and high-speed half-bridge gate driver for GaN power switches
STDRIVEG611High voltage and high-speed half-bridge gate driver for GaN power switches
A2F12M12W2-F1ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC
M2TP80M12W2-2LAAutomotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC
MASTERGAN6650 V GaN half-bridge with gate driver and protections
SCT018HU65G3AGAutomotive-grade silicon carbide Power MOSFET 650 V, 21.5 mΩ typ., 60 A in an HU3PAK package

SCT025HU120G3SCT025HU120G3A