SCT018HU65G3AG

量产SiC / GaN 宽禁带器件VDS 650 VID 60 ARDS(on) 21.5 mΩ

Automotive-grade silicon carbide Power MOSFET 650 V, 21.5 mΩ typ., 60 A in an HU3PAK package

SCT018HU65G3AG 主要参数

来源：原厂数据手册

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SCT018HU65G3SCT018HU65G3A