SCT015W120G3-4AG

量产SiC / GaN 宽禁带器件VDS 1200 VID 129 ARDS(on) 15 mΩ

Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mΩ typ., 129 A in an HiP247-4 package

SCT015W120G3-4AG 主要参数

来源：原厂数据手册

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价格与库存以渠道为准

SCT015W120G3-4Silicon carbide Power MOSFET 1200 V, 15 mΩ typ., 129 A in an HiP247-4 package

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SCT015W120G34SCT015W120G34A