SCT012W90G3-4AG

量产SiC / GaN 宽禁带器件VDS 900 VID 110 ARDS(on) 12 mΩ

Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package

SCT012W90G3-4AG 主要参数

来源：原厂数据手册

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SCT012W90G3AGAutomotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247 package

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SCT012W90G34SCT012W90G34A