SCT020H120G3AG

量产SiC / GaN 宽禁带器件VDS 1200 VID 100 ARDS(on) 18.5 mΩ

Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package

SCT020H120G3AG 主要参数

来源：原厂数据手册

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SCT020H120G3SCT020H120G3A