SCT018W65G3AG

Name: SCT018W65G3AG
Brand: STMicroelectronics

量产SiC / GaN 宽禁带器件VDS 650 VID 55 ARDS(on) 20 mΩ

Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an HiP247 package

SCT018W65G3AG 主要参数

来源：原厂数据手册

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SCT018W65G3-4AGAutomotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an HiP247-4 package

MASTERGAN4High power density 600V half-bridge driver with two enhancement mode GaN HEMT
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GANSPIN611High-voltage half-bridge GaN motor driver
GANSPIN612High-voltage half-bridge GaN motor driver
M2P45M12W2-1LAAutomotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC
M2TP80M12W2-2LAAutomotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC
MASTERGAN1L600 V half-bridge enhancement mode GaN HEMT with high voltage driver
MASTERGAN2High power density 600V Half bridge driver with two enhancement mode GaN HEMT
MASTERGAN4L600 V half-bridge enhancement mode GaN HEMT with high voltage driver
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SCT018W65G3SCT018W65G3A