SCTH35N65G2V-7AG

量产SiC / GaN 宽禁带器件VDS 650 VID 45 ARDS(on) 55 mΩ

Automotive-grade silicon carbide Power MOSFET, 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package

SCTH35N65G2V-7AG 主要参数

来源：原厂数据手册

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SCTH35N65G2V-7Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package

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SCTH35N65G2V7SCTH35N65G2V7A