SCTH60N120G2-7

Name: SCTH60N120G2-7
Brand: STMicroelectronics

量产SiC / GaN 宽禁带器件VDS 1200 VID 60 ARDS(on) 35 mΩ

Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an H²PAK-7 package

SCTH60N120G2-7 主要参数

来源：原厂数据手册

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价格与库存以渠道为准

SCTH60N120G2-7AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package

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