STPSC5G12

ActiveSiC / GaN Wide-Bandgap工作温度 -55 ~ 175 °CVDS 1200 VID 5 A封装 DPAK

1200 V, 5 A power Schottky high surge silicon carbide diode

Manufacturer
STMicroelectronics
Package
DPAK
Datasheet
11 pages · 591 KB

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STPSC5G12 Key Specifications

Source: manufacturer datasheet
工作温度-55 ~ 175 °C
VDS1200 V
ID5 A
封装DPAK

Technical Documents

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