STPSC2H12

ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °C封装 DPAK

1200 V power Schottky silicon carbide diode

Manufacturer
STMicroelectronics
Package
DPAK
Datasheet
10 pages · 463 KB

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STPSC2H12 Key Specifications

Source: manufacturer datasheet
工作温度-40 ~ 175 °C
封装DPAK

Technical Documents

1 document

Datasheet

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