STPSC20H12

ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °CVDS 1200 VID 20 A封装 TO-247

1200 V, 20 A power Schottky silicon carbide diode

Manufacturer
STMicroelectronics
Package
TO-247
Datasheet
14 pages · 735 KB

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STPSC20H12 Key Specifications

Source: manufacturer datasheet
工作温度-40 ~ 175 °C
VDS1200 V
ID20 A
封装TO-247

Technical Documents

1 document

Datasheet

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