STPSC20065-Y
ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °C封装 DO-247
Automotive 650 V power Schottky silicon carbide diode
- Manufacturer
- STMicroelectronics
- Package
- DO-247
- Datasheet
- 14 pages · 613 KB
- Website
- www.st.com
STPSC20065-Y Key Specifications
Source: manufacturer datasheet| 工作温度 | -40 ~ 175 °C |
|---|---|
| 封装 | DO-247 |
Technical Documents
1 documentDatasheet
Alternatives
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