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STPSC20H12G2-TR

ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °CVDS 1200 VID 20 A

1200 V, 20 A, silicon carbide power Schottky diode

Manufacturer: STMicroelectronics
Datasheet: 11 pages · 368 KB
Website: www.st.com

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STPSC20H12G2-TR Key Specifications

Source: manufacturer datasheet

工作温度	-40 ~ 175 °C
VDS	1200 V
ID	20 A

Technical Documents

1 document

Datasheet

Datasheet - STPSC20H12G2-TR - 1200 V, 20 A, silicon carbide power Schottky diode
11 pages368 KB BookmarkedST-STPSC20H12G2TR.pdf

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Order codes / Aliases

STPSC20H12G2