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SCT018H65G3-7

ActiveSiC / GaN Wide-BandgapVDS 650 VID 55 ARDS(on) 20 mΩ

Silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package

Manufacturer: STMicroelectronics
Datasheet: 14 pages · 676 KB
Website: www.st.com

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SCT018H65G3-7 Key Specifications

Source: manufacturer datasheet

VDS	650 V
ID	55 A
RDS(on)	20 mΩ

Technical Documents

1 document

Datasheet

Datasheet - SCT018H65G3-7 - Silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package
14 pages676 KB BookmarkedST-SCT018H65G37.pdf

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Same Series

SCT018H65G3AGAutomotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package

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