STPSC20G12L2Y

ActiveSiC / GaN Wide-Bandgap工作温度 -55 ~ 175 °CVDS 1200 VID 20 A

Automotive 1200 V, 20 A power Schottky high surge silicon carbide diode

Manufacturer
STMicroelectronics
Datasheet
11 pages · 531 KB

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STPSC20G12L2Y Key Specifications

Source: manufacturer datasheet
工作温度-55 ~ 175 °C
VDS1200 V
ID20 A

Technical Documents

1 document

Datasheet

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