STPSC20065C
ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °CVDS 650 VID 10 A封装 TO-247
650 V, dual 10 A, power Schottky silicon carbide diode
- Manufacturer
- STMicroelectronics
- Package
- TO-247
- Datasheet
- 10 pages · 223 KB
- Website
- www.st.com
STPSC20065C Key Specifications
Source: manufacturer datasheet| 工作温度 | -40 ~ 175 °C |
|---|---|
| VDS | 650 V |
| ID | 10 A |
| 封装 | TO-247 |
Technical Documents
1 documentDatasheet
Alternatives
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