STPSC2H065-Y

ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °CVDS 650 VID 2 A

Automotive 650 V, 2 A high surge silicon carbide power Schottky diode

Manufacturer
STMicroelectronics
Datasheet
10 pages · 237 KB

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STPSC2H065-Y Key Specifications

Source: manufacturer datasheet
工作温度-40 ~ 175 °C
VDS650 V
ID2 A

Technical Documents

1 document

Datasheet

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