STPSC2H12-Y
ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °CVDS 1200 VID 2 A
Automotive 1200 V, 2 A power Schottky silicon carbide diode
- Manufacturer
- STMicroelectronics
- Datasheet
- 10 pages · 294 KB
- Website
- www.st.com
STPSC2H12-Y Key Specifications
Source: manufacturer datasheet| 工作温度 | -40 ~ 175 °C |
|---|---|
| VDS | 1200 V |
| ID | 2 A |
Technical Documents
1 documentDatasheet
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